Connection, configuration, and production of a buried...

Details Connection, configuration, and production of a buried... Connection, configuration, and production of a buried...

2005-10-28

2008-03-04

Nguyen, Van Thu (Department: 2824)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S335000

Reexamination Certificate

active

07339237

ABSTRACT:
A power transistor has a semiconductor volume including a plurality of transistor cells connected in parallel, a laterally oriented, highly conductive semiconductor layer buried below the transistor cells in the semiconductor volume, and at least one connection, via which the buried semiconductor layer can be contact-connected from the top side of the power transistor. At least one connection is formed within a trench extending from the top side of the power transistor towards the buried semiconductor layer.

REFERENCES:
patent: 2001/0028085 (2001-10-01), Blanchard
patent: 2001/0048132 (2001-12-01), Ito et al.
patent: 2003/0168712 (2003-09-01), Shin et al.
Fujishima, N. et al., “A Low On-Resistance Trench Lateral Power MOSFET in a 0.6um Start Power Technology for 20-30 V Applications,” IEEE, IEDM, 18.1.1-18.1.4, pp. 455-458 (2002).

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