Conformal pure and doped aluminum coatings and a methodology and

Details Conformal pure and doped aluminum coatings and a methodology and Conformal pure and doped aluminum coatings and a methodology and

1995-12-19

2000-06-20

Meeks, Timothy

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

427252, 427253, 4272557, 4273767, 438680, 438681, 438687, 438688, C23G 1620

Patent

active

060775718

ABSTRACT:
The present invention relates to a process and apparatus for the formation of conformal pure aluminum and doped aluminum coatings on a patterned substrate. It is directed to the use of low temperature thermal and plasma-promoted chemical vapor deposition techniques with biased substrate to provide conformal layers and bilayers comprised of pure Al and/or doped Al (e.g., Al with 0.5 at % copper) on semiconductor device substrates with patterned holes, vias, and trenches with aggressive aspect ratios (hole depth/hole width ratios). The use of the plasma-promoted CVD (PPCVD) process, which employs low plasma power densities, allows the growth of aluminum films with the smooth surface morphology and small grain size necessary for ULSI applications, while substrate bias provides superior coverage and complete aluminum fill of features intrinsic in microelectronic device manufacture. Aluminum doping is achieved by in-situ deposition by PPCVD of sequential bilayers of Al and Cu followed by in-situ annealing, or in-situ simultaneous PPCVD deposition of copper-doped aluminum.

REFERENCES:
patent: 4849260 (1989-07-01), Kusumoto et al.
patent: 4976996 (1990-12-01), Monkowski et al.
patent: 5087485 (1992-02-01), Cho
patent: 5091210 (1992-02-01), Mikoshiba et al.
patent: 5154949 (1992-10-01), Shindo et al.
patent: 5273775 (1993-12-01), Dyer et al.
patent: 5376409 (1994-12-01), Kaloyeros et al.
patent: 5453305 (1995-09-01), Lee
patent: 5464666 (1995-11-01), Fine et al.
H. O. Pierson, "Aluminum Coatings By The Decomposition of Alkyls*", Thin Solid Films, 45, pp. 257-263, (1977) Europe. (No Month).
B. E. Bent, R. G. Nuzzo, and L. H. Dubois, "Surface Organometallic Chemistry In The Chemical Vapor Deposition Of Aluminum Films Using Triisobutylaluminum: =-Hydride and .beta.-Alkyl Elimination Reactions of Surface Alkyl Intermediates", J. Am. Chem. Soc., III, pp. 1634-1644 (1989) New Jersey. (No Month).
A. W. Edith Chan and R. Hoffmann, "From Chemisorption To Mechanism On Surfaces: An Exploration Of The Pyrolysis Of Tyiisobutylaluminum In The Chemical Vapor Deposition Of Aluminum Thin Films", J. Vac. Sci. Technol., A, vol. 9, No. 3, pp. 1569-1580, (1991) New York. (No Month).
W. L. Gladfelter, D. C. Boyd, and K. F. Jensen, "Trimethylamine Complexes of Alane As Precursors For The Low-Pressure Chemical Vapor Deposition Of Aluminum", Chemistry Of Materials, vol. 1, No. 3, pp. 339-343, (1989) Minnesota. (No Month).
E. Kondoh, Y. Kawano, N. Takeyasu, and T. Ohta, "Interconnection Formation By Doping Chemical-Vapor-Deposition Aluminum With Copper Simultaneously: Al-Cu CVD", J. Electrochem. Soc., vol. 141, No. 12, pp. 3494-3499, (1994) Japan. (No Month).
R. A. Levy, P. K. Gallagher, R. Contolini, and F. Schrey, "Properties of LPCVD Aluminum Films Produced By Disproportionation Of Aluminum Monochloride", J. Electrochem. Soc., vol. 132, No. 2, pp. 457-463, (1985) New Jersey. (No Month).
A. Weber, U. Bringmann, K. Schiffmann, and C. P. Klages, "Influence Of RF Plasma On the Nucleation of Aluminum Using N-Trimethylamine-Alane (TMAA) As Precursor", Mat. Res. Soc. Symp. Proc., vol. 282, pp. 311-316, (1993) Germany. (No Month).
M. E. Gross, L. H. Dubois, R. G. Nuzzo, and K. P. Cheung, "Metal-Organic Chemical Vapor Deposition Of Aluminum From Trialkylamine Alanes", Mat. Res. Soc. Symp. Proc., vol. 204, pp. 383-390, (1991) New Jersey. (No Month).
A. S. Russell, K. E. Martin, and C. N. Cochran, "Equilibrium And Rate Of Aluminum Monochloride Formation From Aluminum Chloride And Aluminum", vol. 73, pp. 1466-1469, (1951). (No Month).
D. B. Beach, S. E. Blum, and F. K. LeGoues, "Chemical Vapor Deposition Of Aluminum From Trimethylamine-Alane", J. Vac. Sci. Technol. A, vol. 7, No. 5, pp. 3117-3318 Sep./Oct., (1989) New York.
M. J. Cooke, R. A. Heinecke, R. C. Stern, and J. W. C. Maes, "LPCVD Of Aluminum And Al-Si Alloys For Semiconductor Metallization", Solid State Technology, pp. 62-65, Dec., (1982) Europe.
M. E. Gross, K. P. Cheung, C. G. Fleming, J. Kovalchick, and L. A. Heimbrook, "Metalorganic Chemical Vapor Deposition Of Aluminum From Trimethylamine Alane Using Cu and TiN Nucleation Activators", J. Vac. Sci. Technol. A, vol. 9, No. 1, pp. 57-64, Jan./Feb., (1991) New Jersey.

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