Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-12-23
2009-12-08
Smith, Zandra (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S627000, C438S677000, C438S678000, C257SE21584
Reexamination Certificate
active
07629252
ABSTRACT:
Methods of fabricating interconnect structures utilizing barrier material layers formed with an electroless deposition technique utilizing a coupling agent complexed with a catalytic metal and structures formed thereby. The fabrication fundamentally comprises providing a dielectric material layer having an opening extending into the dielectric material from a first surface thereof, bonding the coupling agent to the dielectric material within the opening, and electrolessly depositing the barrier material layer, wherein the electrolessly deposited barrier material layer material adheres to the catalytic metal of the coupling agent.
REFERENCES:
patent: 6344413 (2002-02-01), Zurcher et al.
patent: 6667551 (2003-12-01), Hanaoka et al.
patent: 6958547 (2005-10-01), Dubin et al.
patent: 7365011 (2008-04-01), Lavoie et al.
patent: 2004/0137161 (2004-07-01), Segawa et al.
patent: 2004/0235294 (2004-11-01), Imori et al.
Valery M. Dubin et al., “Use of Conductive Electrolessly Deposited Etch Stop Layers, Liner Layers and Via Plugs in Interconnect Structures”, U.S. Appl. No. 10/139,052, filed May 3, 2002, 34 pages.
Steven W. Johnston et al., “Forming a Copper Diffusion Barrier”, U.S. Appl. No. 10/284,576, filed Oct. 31, 2002, 23 pages.
Valery M. Dubin et al., “Method for Forming Electroless Metal Low Resistivity Interconnects”, U.S. Appl. No. 10/458,042, filed Jun. 9, 2003, 18 pages.
Ting Zhong et al., “Methods to Deposit Metal Alloy Barrier Layers”, U.S. Appl. No. 10/957,117, filed Sep. 30, 2004, 34 pages.
Ting Zhong et al., “Forming a Barrier Layer in Joint Structures”, U.S. Appl. No. 11/078,611, filed Mar. 11, 2005, 22 pages.
Harsono Simka et al., “Organometallic Precursors for the Chemical Phase Deposition of Metal Films in Interconnect”, U.S. Appl. No. 11/096,860, filed Mar. 31, 2005, 31 pages.
Balakrishnan Sridhar
Chebiam Ramanan V.
Cheng Chin-Chang
Dubin Valery M.
O'Brien Kevin P.
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Novacek Christy L
Smith Zandra
LandOfFree
Conformal electroless deposition of barrier layer materials does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Conformal electroless deposition of barrier layer materials, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Conformal electroless deposition of barrier layer materials will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4078249