Confined lateral selective epitaxial growth

Details Confined lateral selective epitaxial growth Confined lateral selective epitaxial growth

1989-06-09

1990-08-14

Straub, Gary P.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156613, 156DIG64, 156DIG111, 148DIG26, 437 90, 437 78, 437927, C30B 2304, C30B 2504, H01L 21308

Patent

active

049484567

ABSTRACT:
A method is disclosed for forming laterally grown epitaxial silicon without the requirement for subsequent thinning or planarization of the epitaxial silicon. Generally a low, wide cavity consisting of walls of dielectric material and having a side opening, or via hole, is formed and the epitaxial silicon is then selectively grown within the cavity. The resulting epitaxial silicon structure is characterized by being flat and wide with an aspect ratio of approximately 6 to 1.

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