Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1986-03-25
1988-05-31
Niebling, John F.
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419234, 204298, C23C 1446
Patent
active
047479221
ABSTRACT:
A hollow cylindrical target, lined internally with a sputter deposit material and open at both ends, surrounds a substrate on which sputtered deposition is to be obtained. An ion beam received through either one or both ends of the open cylindrical target is forced by a negative bias applied to the target to diverge so that ions impinge at acute angles at different points of the cylindrical target surface. The ion impingement results in a radially inward and downstream directed flux of sputter deposit particles that are received by the substrate. A positive bias applied to the substrate enhances divergence of the approaching ion beams to generate a higher sputtered deposition flux rate. Alternatively, a negative bias applied to the substrate induces the core portion of the ion beams to reach the substrate and provide ion polishing of the sputtered deposit thereon.
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Chafin James H.
Daniel Anne D.
Hightower Judson R.
Nguyen Nam X.
Niebling John F.
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