Configuration random access memory

Electronic digital logic circuitry – Multifunctional or programmable – Having details of setting or programming of interconnections...

Reexamination Certificate

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Reexamination Certificate

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08030962

ABSTRACT:
Integrated circuits such as programmable logic device integrated circuits are provided that have configuration random-access memory elements. The configuration random-access memory elements are loaded with configuration data to customize programmable logic on the integrated circuits. Each memory element has a capacitor that stores data for that memory element. A pair of cross-coupled inverters are connected to the capacitor. The inverters ensure that the memory elements produce output control signals with voltages than range from one power supply rail to another. Each configuration random-access memory element may have a clear transistor. The capacitor may be formed in a dielectric layer that lies above the transistors of the inverters, the address transistor, and the clear transistor. The inverters may be powered with an elevated power supply voltage.

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“TSMC Embedded High Density Memory,” Taiwan Semiconductor Manufacturing Company Ltd, May 2006.
Lin, Lin-Shih et al. U.S. Appl. No. 11/335,437, filed Jan. 18, 2006.

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