Configuration of trenched semiconductor power device to...

Details Configuration of trenched semiconductor power device to... Configuration of trenched semiconductor power device to...

2011-06-14

2011-06-14

Dickey, Thomas L (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29028

Reexamination Certificate

active

07960787

ABSTRACT:
A semiconductor power device formed on a semiconductor substrate of a first conductivity type wherein the semiconductor power device includes trench gates surrounded by body regions of a second conductivity type encompassing source regions of the first conductivity type therein. The semiconductor power device further includes trench contact structure having a plurality of trench contacts with trenches extended into the body regions for as source-body contacts and extended into the trench gates as gate contact. The semiconductor power device further includes a termination area wherein a plurality of the trench gate contacts are electrically connected to the source-body contacts.

REFERENCES:
patent: 2005/0215011 (2005-09-01), Darwish et al.

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