Static information storage and retrieval – Addressing – Including particular address buffer or latch circuit...
Reexamination Certificate
2008-07-22
2008-07-22
Dinh, Son T (Department: 2824)
Static information storage and retrieval
Addressing
Including particular address buffer or latch circuit...
C365S189040, C365S233120
Reexamination Certificate
active
07403445
ABSTRACT:
In an improved construction of a memory device, the memory device includes a first group of pins via which a command/address signals are received and via which data signals are received, and a second group of pins via which the command/address signals are received and via which data signals are output. When the data signals are input to the first group of pins, the command/address signals are received via the second group of pins. When the data signals are output from the second group of pins, the command/address signals are received via the first group of pins.
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patent: 2004/0027857 (2004-02-01), Ooishi
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patent: 10-2004-0062717 (2004-09-01), None
Dinh Son T
Mills & Onello LLP
Nguyen Hien N
Samsung Electronics Co,. Ltd.
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