Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-07-12
2011-07-12
Pert, Evan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S301000, C257SE29130, C257SE29201
Reexamination Certificate
active
07977740
ABSTRACT:
This invention discloses semiconductor device that includes a top region and a bottom region with an intermediate region disposed between said top region and said bottom region with a controllable current path traversing through the intermediate region. The semiconductor device further includes a trench with padded with insulation layer on sidewalls extended from the top region through the intermediate region toward the bottom region wherein the trench includes randomly and substantially uniformly distributed nano-nodules as charge-islands in contact with a drain region below the trench for electrically coupling with the intermediate region for continuously and uniformly distributing a voltage drop through the current path.
REFERENCES:
patent: 5473176 (1995-12-01), Kakumoto
patent: 2006/0118852 (2006-06-01), Rueb
patent: 2006/0145230 (2006-07-01), Omura et al.
patent: 2008/0150020 (2008-06-01), Challa et al.
Feng Tao
Hébert François
Alpha and Omega Semiconductor Incorporated
Lin Bo-In
Pert Evan
Rodela Eduardo A
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