Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-07-05
2005-07-05
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S343000, C257S379000, C257S532000
Reexamination Certificate
active
06914297
ABSTRACT:
The invention relates to a configuration for generating a low-voltage signal proportional to the high voltage present between the source and the drain of a power transistor. For this purpose, a capacitive voltage divider including the source-gate capacitance serving as a low-voltage tap and the source-drain capacitance serving as a high-voltage element is situated in a voltage sense region.
REFERENCES:
patent: 4893158 (1990-01-01), Mihara et al.
patent: 5341003 (1994-08-01), Obinata
patent: 6815798 (2004-11-01), Aiello et al.
patent: 2002/0060340 (2002-05-01), Deboy et al.
patent: 2005/0024925 (2005-02-01), Deboy et al.
Deboy Gerald
Willmeroth Armin
Greenberg Laurence A.
Infineon - Technologies AG
Locher Ralph E.
Prenty Mark V.
Stemer Werner H.
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