Conductor layer nitridation

Details Conductor layer nitridation Conductor layer nitridation

2005-05-03

2005-05-03

Eckert, George (Department: 2815)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S592000, C438S652000, C438S653000, C438S761000, C438S769000, C438S770000, C438S775000, C438S778000, C438S787000, C438S791000, C257S388000, C257S406000, C257S410000, C257S411000, C257S412000, C257S639000, C257S640000

Reexamination Certificate

active

06887774

ABSTRACT:
Methods and apparatus for forming word line stacks comprise forming a thin nitride layer coupled between a bottom silicon layer and a conductor layer. In a further embodiment, a diffusion barrier layer is coupled between the thin nitride layer and the bottom silicon layer. The thin nitride layer is formed by annealing a silicon oxide film in a nitrogen-containing ambient.

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