Conductor layer nitridation

Details Conductor layer nitridation Conductor layer nitridation

1997-02-19

1999-07-20

Booth, Richard A

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438653, 438655, 438656, 438657, 438664, 438775, H01L 213115, H01L 21318, H01L 21324

Patent

active

059267305

ABSTRACT:
Methods and apparatus for forming word line stacks comprise forming a thin nitride layer coupled between a bottom silicon layer and a conductor layer. In a further embodiment, a diffusion barrier layer is coupled between the thin nitride layer and the bottom silicon layer. The thin nitride layer is formed by annealing a silicon oxide film in a nitrogen-containing ambient.

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