Conductor-insulator-conductor structure

Details Conductor-insulator-conductor structure Conductor-insulator-conductor structure

1998-01-15

2000-06-27

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257529, 257209, H01L 2900

Patent

active

060810211

ABSTRACT:
An integrated circuit device including a conductor-insulator-conductor structure and a method of manufacturing the structure simultaneously while forming a dual damascene via. A first interconnect layer is formed upon a first interlevel dielectric. Openings extend through a second interlevel dielectric to the first interconnect layer. An insulator is deposited in the openings. A trench is then etched into the upper portion of the openings that will become vias while simultaneously removing the insulator from the bottom of the openings that will become vias. A conductor is then deposited in the openings and in the trenches and chemical-mechanical polishing (CMP) is used to pattern the conductor. A third interlevel dielectric is then deposited, openings are formed extending to the conductors, and third interconnect layer conductors are deposited and patterned.

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