Conductor crossovers for integrated RC-circuits

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

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204 15, 204 38A, 29847, 427 80, 427 96, 427101, 361410, 430317, 430318, 430319, C25D 1102, C25D 1134, H05K 306

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042834856

ABSTRACT:
A method is disclosed for the manufacture in electric thin film R and RC circuits of a conductor crossover. A first conductor is structured at the crossover from a TaAl double layer. A portion of the top layer of the double layer is converted to a TaAl oxide and an SiO.sub.2 layer is then applied over the TaAl oxide as a double dielectric. A second conductor is then structured over the double dielectric.

REFERENCES:
patent: 3949275 (1976-04-01), Muenz
patent: 4200502 (1980-04-01), Muenz et al.
Potzlberger, "Thin Film Integrated RC-Networks with Compensated Temperature Coefficients of R and C" Electro Component Science and Technology, 1977, vol. 4, pp. 139-142.

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