Conductive via formation utilizing electroplating

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S612000, C438S674000, C438S675000, C257SE21575, C257SE21585, C257SE21586

Reexamination Certificate

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07741218

ABSTRACT:
A method for forming a conductive via is discussed and includes forming a seed layer over a first side of a semiconductor substrate, wherein the semiconductor substrate includes a first side opposite a second side, forming a via hole in a semiconductor substrate from the second side of the semiconductor substrate, wherein the via hole exposes the seed layer; and electroplating a conductive via material in the via hole from the seed layer. In one embodiment, a continuous conductive layer is formed over and electrically coupled to the seed layer. The continuous conductive layer can serve as the current source while electroplating the conductive via material.

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