Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-02-08
2005-02-08
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S023000, C438S618000, C257S622000, C073S204270
Reexamination Certificate
active
06852627
ABSTRACT:
Methods for fabricating a conductive contact (through-via) through a full thickness of a substrate such as a semiconductor wafer or interposer substrate, and semiconductor devices and systems incorporating the conductive through-via are provided. The conductive contact is fabricated by applying a metal layer onto a backside of a substrate, forming a through-hole through the substrate and the metal layer, sealing the hole in the metal layer by an electroless plating process, and filling the hole by an electroplating or an electroless plating process.
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U.S. patent application Ser. No. 10/267,822, filed Oct. 9, 2002, Sinha.
Farnworth Warren M.
Sinha Nishant
Nelms David
Tran Mai-Huong
Whyte Hirschboeck Dudek SC
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