Etching a substrate: processes – Etching of semiconductor material to produce an article...
Reexamination Certificate
2006-03-28
2006-03-28
Alanko, Anita (Department: 1765)
Etching a substrate: processes
Etching of semiconductor material to produce an article...
C216S013000, C216S017000, C216S018000, C216S022000, C216S041000, C216S047000, C216S049000, C216S075000, C216S100000, C029S603070, C205S122000, C205S123000, C205S170000, C430S312000, C430S318000, C438S702000
Reexamination Certificate
active
07018548
ABSTRACT:
A high-precision conductive thin film pattern having a high aspect ratio and a method of forming the same are provided. Further, a method of manufacturing a thin film magnetic head, a thin film inductor, and a micro device each including such a conductive thin film pattern is provided. Since a stacked layer structure including two conductive layer patterns formed by plating growth using an underfilm pattern as an electrode film and an intermediate conductive layer pattern sandwiched by the two conductive layer patterns is provided, a thicker conductive thin film pattern is obtained. An intermediate conductive layer covering a first resist frame is formed and, after that, a second resist frame is formed in a position corresponding to the first resist frame. Consequently, without causing inter-mixing, the first and second resist frames can be stacked. Thus, a thicker conductive thin film pattern can be formed easily with high precision.
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Alanko Anita
TDK Corporation
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