Conductive structures in integrated circuits

Details Conductive structures in integrated circuits Conductive structures in integrated circuits

1994-06-07

1995-05-23

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257382, 257384, 257754, H01L 2954

Patent

active

054183987

ABSTRACT:
A conductive structure for an integrated circuit. An amorphous silicon layer overlies a silicide layer atop a conductive polycrystalline silicon structure. An insulating layer overlies the overall structure formed by the three layers. An opening through the insulating layer also extends through the amorphous silicon layer to expose a portion of the silicide layer. An upper interconnect layer extends through the insulating layer and the amorphous silicon layer to make contact with the silicide layer.

REFERENCES:
patent: 4494301 (1985-01-01), Faraone
patent: 4697333 (1987-10-01), Nakahara
patent: 4737474 (1988-04-01), Price et al.
patent: 4873204 (1989-10-01), Wong et al.
patent: 4954855 (1990-09-01), Mimura et al.
patent: 5168072 (1992-12-01), Moslehi
patent: 5243220 (1993-09-01), Shibata et al.

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