Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure
Reexamination Certificate
2003-02-20
2004-11-09
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Test or calibration structure
C257S509000, C257S510000, C257S519000, C257S520000, C257S536000, C257S538000, C257S544000, C257S773000, C257S774000
Reexamination Certificate
active
06815714
ABSTRACT:
BRIEF DESCRIPTION OF THE DRAWINGS
FIGS. 1A-1C
are views illustrating an example of a conductive structure
100
in accordance with the present invention.
FIGS. 2A-2G
are a series of cross-sectional views illustrating an example of a method of forming a conductive structure in accordance with the present invention.
FIGS. 3A-3G
are a series of cross-sectional views illustrating an example of a method of forming a conductive structure in accordance with the present invention.
FIGS. 4A-4B
are views illustrating an example of a conductive structure
400
in accordance with the present invention.
FIGS. 5A-5G
are cross-sectional views illustrating an example of a method of forming a conductive structure in accordance with the present invention.
FIGS. 6A-6E
are a series of views illustrating an example of a conductive structure
600
in accordance with the present invention.
FIGS.
7
A-
7
F
2
are views illustrating an example of a method of forming a conductive structure in accordance with the present invention.
FIGS. 8A-8E
are a series of views illustrating an example of a conductive structure
800
in accordance with the present invention.
FIGS.
9
A-
9
F
2
are cross-sectional views illustrating an example of a method of forming a conductive structure in accordance with the present invention.
FIGS. 10A-10C
are views illustrating an example of a conductive structure
1000
in accordance with the present invention.
REFERENCES:
patent: 4808550 (1989-02-01), Fukushima
patent: 5200639 (1993-04-01), Ishizuka et al.
patent: 5665630 (1997-09-01), Ishizuka et al.
patent: 6144040 (2000-11-01), Ashton
patent: 6365447 (2002-04-01), Hebert et al.
patent: 6472709 (2002-10-01), Blanchard
patent: 2002/0125527 (2002-09-01), Blanchard
patent: 2002/0142507 (2002-10-01), Egashira
patent: 2003/0042574 (2003-03-01), Schwartzmann
Coppock William M.
Dark Charles A.
Huynh Andy
National Semiconductor Corporation
Nelms David
Pickering Mark C.
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