Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure
Reexamination Certificate
2003-02-20
2004-11-02
Gurley, Lynne A. (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Test or calibration structure
C257S503000, C257S509000, C257S510000, C257S516000, C257S519000, C257S520000, C257S528000, C257S536000, C257S538000, C257S544000, C257S548000, C257S577000, C257S734000, C257S773000
Reexamination Certificate
active
06812486
ABSTRACT:
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1
is a cross-sectional view illustrating an example of a conductive structure
100
in accordance with the present invention.
FIGS. 2A-2F
are a series of cross-sectional views illustrating a method of forming a conductive structure in accordance with the present invention.
FIGS. 3A-3F
are a series of cross-sectional views illustrating a method of forming a conductive structure in accordance with the present invention.
FIG. 4
is a cross-sectional view illustrating an example of a conductive structure
400
in accordance with the present invention.
FIGS. 5A-5F
are cross-sectional views illustrating an example of a method of forming a conductive structure in accordance with the present invention.
FIGS. 6A-6C
are cross-sectional views illustrating an example of a conductive structure
600
in accordance with the present invention.
FIGS. 7A-7F
are cross-sectional views illustrating an example of a method of forming a conductive structure in accordance with the present invention.
FIGS. 8A-8C
are cross-sectional views illustrating an example of a conductive structure
800
in accordance with the present invention.
FIGS. 9A-9F
are cross-sectional views illustrating an example of a method of forming a conductive structure in accordance with the present invention.
FIGS. 10A and 10B
are views illustrating an example of a conductive structure
1000
in accordance with the present invention.
REFERENCES:
patent: 4808550 (1989-02-01), Fukushima
patent: 5200639 (1993-04-01), Ishizuka et al.
patent: 5665630 (1997-09-01), Ishizuka et al.
patent: 6144040 (2000-11-01), Ashton
patent: 6365447 (2002-04-01), Hebert et al.
patent: 6472709 (2002-10-01), Blanchard
patent: 2002/0125527 (2002-09-01), Blanchard
patent: 2002/0142507 (2002-10-01), Egashira
patent: 2003/0042574 (2003-03-01), Schwartzmann
Coppock William M.
Dark Charles A.
Gurley Lynne A.
National Semiconductor Corporation
Pickering Mark C.
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