Conductive spacers for semiconductor devices and methods of...

Details Conductive spacers for semiconductor devices and methods of... Conductive spacers for semiconductor devices and methods of...

2007-08-31

2011-10-18

Lee, Calvin (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S267000

Reexamination Certificate

active

08039888

ABSTRACT:
A method of forming a conductive spacer on a semiconductor device. The method includes depositing a polysilicon layer on the semiconductor device, selectively implanting dopant ions in the polysilicon layer on a first side of a transistor region of the semiconductor device to define a conductive spacer area, and removing the polysilicon layer except for the conductive spacer area. Optionally, a silicidation process can be performed on the conductive spacer area so that the conductive spacer is made up of metal silicide.

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