Conductive spacers extended floating gates

Details Conductive spacers extended floating gates Conductive spacers extended floating gates

2008-07-15

2011-11-22

Menz, Laura (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S316000, C257S321000

Reexamination Certificate

active

08063429

ABSTRACT:
A method for manufacturing on a substrate a semiconductor device with improved floating-gate to control-gate coupling ratio is described. The method comprises the steps of first forming an isolation zone in the substrate, thereafter forming the floating gate on the substrate, thereafter extending the floating gate using polysilicon spacers, and thereafter forming the control gate over the floating gate and the polysilicon spacers. Such a semiconductor device may be used in flash memory cells or EEPROMs.

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