Conductive photoresist to mitigate antenna effect

Details Conductive photoresist to mitigate antenna effect Conductive photoresist to mitigate antenna effect

1996-04-08

1997-12-30

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

15665911, 216 41, 216 67, 437189, 437229, H01L 2100

Patent

active

057025665

ABSTRACT:
During gas plasma etching, trapped charge from the plasma can be concentrated in semiconductor devices through the conductive portions of an integrated circuit, leading to their damage. This is known as the antenna effect. This effect can be mitigated by using a photoresist that is electrically conductive during plasma etching. This has been shown to reduce said charge accumulation and device damage. Said conductive photoresist is employed during integrated circuit processing in the same way as is the standard photoresist of the prior art.

REFERENCES:
patent: 5350710 (1994-09-01), Hong et al.
patent: 5393701 (1995-02-01), Ko et al.
"Gate Oxide Charging and Its Elimination for Metal Antenna Capacitor and Transistor in VLSI CMOS Double Layer Metal Technology" pub in Symposium on VLSI Technology, Jun. 1988 pp. 73-74.

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