Conductive organic nonvolatile memory device having...

Details Conductive organic nonvolatile memory device having... Conductive organic nonvolatile memory device having...

2008-04-23

2011-11-01

Tran, Andrew Q (Department: 2824)

Static information storage and retrieval

Systems using particular element

Molecular or atomic

C365S153000, C365S163000, C365S148000, C977S943000, C257S002000, C438S780000

Reexamination Certificate

active

08050081

ABSTRACT:
A non-volatile memory device includes lower and upper electrodes over a substrate, a conductive organic material layer between the lower and the upper electrodes, and a nanocrystal layer located within the conductive organic material layer, wherein the nanocrystal layer includes a plurality of nanocrystals surrounded by an amorphous barrier, wherein the device has a multi-level output current according to a voltage level of an input voltage coupled to the lower and the upper electrodes during a data read operation.

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Bozano et al., “Mechanism for bistability in organic memory elements,”Applied Physics Letters84:607-609 (2004).

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