Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-07-15
2008-07-15
Nguyen, Cuong (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S288000, C257SE29158, C257SE29160
Reexamination Certificate
active
07400020
ABSTRACT:
MOSFET gate structures are provided comprising a niobium monoxide gate, overlying a gate dielectric. The niobium monoxide gate may have a low work function suitable for use as an NMOS gate.
REFERENCES:
patent: 5288563 (1994-02-01), Saito et al.
patent: 2001/0025999 (2001-10-01), Suguro
Gao Wei
Ono Yoshi
Law Office of Gerald Maliszewski
Maliszewski Gerald
Nguyen Cuong
Sharp Laboratories of America Inc.
Tran Trang Q
LandOfFree
Conductive niobium oxide gate MOSFET does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Conductive niobium oxide gate MOSFET, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Conductive niobium oxide gate MOSFET will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2787014