Conductive niobium oxide gate MOSFET

Details Conductive niobium oxide gate MOSFET Conductive niobium oxide gate MOSFET

2008-07-15

2008-07-15

Nguyen, Cuong (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S288000, C257SE29158, C257SE29160

Reexamination Certificate

active

07400020

ABSTRACT:
MOSFET gate structures are provided comprising a niobium monoxide gate, overlying a gate dielectric. The niobium monoxide gate may have a low work function suitable for use as an NMOS gate.

REFERENCES:
patent: 5288563 (1994-02-01), Saito et al.
patent: 2001/0025999 (2001-10-01), Suguro

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