Conductive memory stack with non-uniform width

Details Conductive memory stack with non-uniform width Conductive memory stack with non-uniform width

2006-03-07

2006-03-07

Le, Thao P. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S257000, C438S003000

Reexamination Certificate

active

07009235

ABSTRACT:
A conductive memory stack is provided. The memory stack includes a bottom electrode, a top electrode and a multi-resistive state element that is sandwiched between the electrodes. The bottom electrode can be described as having a top face with a first surface area, the top electrode has a bottom face with a second surface area and the multi-resistive state element has a bottom face with a third surface area and a top face with a fourth surface area. The multi-resistive state element's bottom face is in contact with the bottom electrode's top face and the multi-resistive state element's top face is in contact with the top electrode's bottom face. Furthermore, the fourth surface area is not equal to the second surface area.

REFERENCES:
patent: 6204139 (2001-03-01), Liu et al.
patent: 6249014 (2001-06-01), Bailey
patent: 6456525 (2002-09-01), Perner et al.
patent: 6603161 (2003-08-01), Kanaya et al.
patent: 6680499 (2004-01-01), Kumura et al.
patent: 6809360 (2004-10-01), Kato
Beck, A. et al., “Reproductible switching effect in thin oxide films for memory applications,” Applied Physics Letters, vol. 77, No. 1, Jul. 3, 2000,139-141.
Liu, S.Q., et al., “Electric-pulse-induced reversible resistance change effect in magnetoresistive films”, Applied Physics Letters, vol. 76, No. 19, May 8, 2000, 2749-2651.
Liu, S.Q., et al., “A New Concept For Non-Volatile Memory: Electric-Pulse Induced Reversible Resistance Change Effect In Magnetoresistive Films”, Space Vacuum Epitaxy Center, University of Huston, Huston Tx, 7 Pages.
Park, In Seon et al., “Ultra-thin EBL(encapsulated barrier layer)for Ferroelectric Capacitor,” IDEM, vol. 97, 617-620.
Rossel, C. et al., “Electrical current distribution across a metal-insulator-metal structure during bistable switching,” Journal of Applied Physics, vol. 90, No. 6, Sep. 15, 2001, 2892-2898.
Watanabe, Y. et al., “Current-driven insulator-conductor transition and nonvolatile memory in chromium-doped SrTiO3single crystals,” Applied Physics Letters, vol. 78, No. 23, Jun. 4, 2001, 3738-3740.
Yoon, Dong-soon et al., “High Performance of Novel Oxygen Diffusion Barrier Materials for Future High-Density Dynamic Random Access Memory Devices,” IEEE Transactions on Electron Devices, vol. 49, No. 11, Nov. 2002, 1917-1927.

Affiliated with

Also associated with

Rating

Conductive memory stack with non-uniform width does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Conductive memory stack with non-uniform width, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Conductive memory stack with non-uniform width will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3535568