Conductive memory device with conductive oxide electrodes

Details Conductive memory device with conductive oxide electrodes Conductive memory device with conductive oxide electrodes

2008-07-15

2008-07-15

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE45002, C257S537000, C257SE27006, C257SE45003, C365S148000

Reexamination Certificate

active

07400006

ABSTRACT:
A multi-resistive state element that uses barrier electrodes is provided. If certain materials are used as electrodes, the electrodes can be used for multiple purposes. Oxides and nitrides are especially well suited for acting as a barrier layer, and possibly even an adhesion layer and a sacrificial layer.

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