Conductive memory array having page mode and burst mode...

Details Conductive memory array having page mode and burst mode... Conductive memory array having page mode and burst mode...

2006-08-29

2006-08-29

Zarabian, Amir (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S163000, C365S189050, C365S207000, C365S220000, C365S230060, C365S230080, C365S230090, C365S233100, C365S238500

Reexamination Certificate

active

07099179

ABSTRACT:
Conductive memory array having page mode and burst mode write capability. The conductive memory array includes two-terminal memory plugs and driver circuits configured to write information to the memory plugs in two cycles. The array also includes associated circuitry that allows it to carry out such two-cycle writes in either page mode or burst mode.

REFERENCES:
patent: 3886577 (1975-05-01), Buckley
patent: 5023844 (1991-06-01), Arnold et al.
patent: 5293350 (1994-03-01), Kim et al.
patent: 5296716 (1994-03-01), Ovshinsky et al.
patent: 5703818 (1997-12-01), Osawa
patent: 6108243 (2000-08-01), Suzuki et al.
patent: 6204139 (2001-03-01), Liu et al.
patent: 6256247 (2001-07-01), Pemer
patent: 6473332 (2002-10-01), Ignatiev et al.
patent: 6531371 (2003-03-01), Hsu et al.
patent: 6633509 (2003-10-01), Scheuerlein et al.
patent: 6687147 (2004-02-01), Fricke et al.
patent: 6711045 (2004-03-01), Fricke et al.
patent: 6753561 (2004-06-01), Rinerson et al.
patent: 6807088 (2004-10-01), Tsuchida
patent: 6836421 (2004-12-01), Rinerson et al.
patent: 6839269 (2005-01-01), Iwata et al.
patent: 6856536 (2005-02-01), Rinerson et al.
patent: 6927430 (2005-08-01), Hsu
patent: 2001/0008490 (2001-07-01), Kawano
patent: 2001/0015929 (2001-08-01), Bae et al.
patent: 2002/0186593 (2002-12-01), Takano et al.
patent: 2003/0132456 (2003-07-01), Miyai et al.
patent: 2003/0146776 (2003-08-01), Nakase
patent: 2003/0202384 (2003-10-01), Afghahi et al.
patent: 2004/0066680 (2004-04-01), Tanaka et al.
patent: 2004/0105296 (2004-06-01), Tom Ho
patent: 2004/0141369 (2004-07-01), Noguchi
patent: 2004/0165415 (2004-08-01), Dixit et al.
patent: 2004/0257852 (2004-12-01), Yamamura
patent: 2005/0083719 (2005-04-01), Kohno
patent: 2005/0135148 (2005-06-01), Chevallier et al.
patent: 2005/0151156 (2005-07-01), Wu et al.
Gerstner et al., “Nonvolatile memory effects in nitrogen doped tetrahedral amorphous carbon thin films”, 1998, Journal of Applied Physics, vol. 84, No. 10, pp. 5647-5651.
Simmons, et al., “New conduction and reversible memory phenomena in thin insulating films”, 1967, Proc. Roy. Soc. A., vol. 301, pp. 77-102.
U.S. Appl. No. 60/536,115, filed Jan. 13, 2004, Wu et al.
A.Baikalov, et al, “Field -driven hysteretic and reversible resistive switch at the Ag-Pr0.7Ca0.3MnO3 interface” Applied Physics Letters, vol. 83, No. 5, Aug. 4, 2003, pp. 957-959.
A. Beck, J. Bednorz, A. Bietsch, Ch. Gerber, C. Rossel, D. Widmer, “Reproducible switching effect in thin oxide films for memory applications,” Applied Physics Letters, vol. 77, No. 1, Jul. 3, 2000, pp. 139-141.
A. Sawa, et al, “Hysteretic current-voltage characteristics and resistance switching at a rectifying Ti/Pr0.7Ca0.3MnO3interface” Applied Physics Letters, vol. 85, No. 18, Nov. 1, 2004, pp. 4073-4075.
C. Rossel, G.I. Meijer, D. Brémaud, D. Widmer, “Electrical current distribution across a metal-insulator-metal structure during bistable switching,” Journal of Applied Physics, vol. 90, No. 6, Sep. 15, 2001, pp. 2892-2898.
David Oxley, “Memory Effects in Oxide Films” in Oxides and Oxide Films, vol. 6, pp. 251-325 (Chapter 4) (Ashok. K. Vijh ed., Marcel Drekker) (1981).
J.G. Simmons and R.R. Verderber, “New Conduction and Reversible Memory Phenomena in Thin Insulating Films,” Proc. Roy. Soc. A., 301 (1967), pp. 77-102.
Liu et al., “A New Concept for Non-Volatile Memory: The Electric-Pulse Induced Resistive Change Effect in Colossal Magnetoresistive Thin Films,” Non-Volatile Memory Technology Symposium, Nov. 7, 2001, pp. 1-7.
Liu et al., “Electric-pulse-induced reversible resistance change effect in magnetoresistive films,” Applied Physics Letters, vol. 76, No. 19, May 8, 2000, pp. 2749-2751.
R.E. Thurstans and D.P. Oxley, “The Electroformed metal-insulator-metal structure: A comprehensive model,” J. Phys. D.: Appl. Phys. 35 (2002), Apr. 2, 2002, pp. 802-809.
Y. Watanabe, J.G. Bednorz, A. Bietsch, Ch. Gerber, D. Widmer, A. Beck, “Current-driven insulator-conductor transition and nonvolatile memory in chromium-doped SrTiO3single crystals,” Applied Physics Letters, vol. 78, No. 23, Jun. 4, 2001, pp. 3738-3740.
U.S. Appl. No. 10/745,264, filed Dec. 22, 2003, Chevallier et al.
Office Action Mailed Mar. 8, 2006 for U.S. Appl. No. 10/745,264 ; Lam D.
Office Action Mailed Sep. 8, 2005 for U.S. Appl. No. 10/745,264 ; Lam D.
Applicants Response to Office Action Mailed Sep. 8, 2005 for U.S. Appl. No. 10/745,264.

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