Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-10-25
2010-10-26
Dang, Phuc T (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S759000, C257S760000, C438S584000, C438S590000
Reexamination Certificate
active
07821136
ABSTRACT:
Methods for forming conductive layers. A layer of metal composite is applied on a substrate, comprising a plurality of metal flakes, a plurality of nanometer metal spheres, and a plurality of mixed metal precursors. The plurality of mixed metal precursors comprises a mixture of inorganic salts and organic acidic salts. The layer of metal composite is cured to induce an exothermic reaction, thereby forming a conductive layer on the substrate at a relatively low temperature (<200° C.).
REFERENCES:
patent: 6036889 (2000-03-01), Kydd
patent: 6440607 (2002-08-01), Harada et al.
patent: 2003/0124259 (2003-07-01), Kodas et al.
patent: 2003/0155023 (2003-08-01), Miyazawa et al.
patent: WO9943728 (1999-09-01), None
Houng Ying-Chang
Lin Hong-Ching
Shih Chi-Jen
Shih Shao-Ju
Dang Phuc T
Industrial Technology Research Institute
Thomas Kayden Horstemeyer & Risley
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