Conductive layer forming method using etching mask with directio

Details Conductive layer forming method using etching mask with directio Conductive layer forming method using etching mask with directio

1998-11-05

2000-11-21

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438198, 438714, 438717, 438669, 438636, 438952, H01L 213205, H01C 214763

Patent

active

061502502

ABSTRACT:
An electrode material layer of a WSi.sub.2 /polysilicon lamination layer and a conductive material layer for antireflection made of TiN or TiON and containing the direction <200> are sequentially deposited on a gate insulating film. The conductive material layer is patterned through dry etching using a resist layer as a mask to leave a portion of the conductive material layer. The resist layer may be as thin as capable of patterning the conductive material layer. After the resist layer is removed, the electrode material layer is patterned through dry etching using the conductive material layer as a mask to leave a portion of the electrode material layer. A lamination of the left electrode material layer and conductive material layer is used as a gate electrode layer. A lamination of the resist layer and conductive material layer may be used as a mask.

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