Conductive interconnect structure and method of formation

Details Conductive interconnect structure and method of formation Conductive interconnect structure and method of formation

1996-06-18

1999-02-16

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257649, 257413, 257757, H01L 310232

Patent

active

058723854

ABSTRACT:
In one embodiment, delamination of a patterned silicon nitride anti-reflective layer (26) from an underlying patterned tungsten silicide layer (32), is prevented by forming a thin silicon layer (30) between the patterned tungsten silicide layer (32) and the overlying patterned silicon nitride anti-reflective layer (26).

REFERENCES:
patent: 4065730 (1977-12-01), Minden
patent: 4128670 (1978-12-01), Gaensslen
patent: 4398335 (1983-08-01), Lehrer
patent: 4476483 (1984-10-01), van de Ven et al.
patent: 4488166 (1984-12-01), Lehrer
patent: 4495222 (1985-01-01), Anderson et al.
patent: 4569122 (1986-02-01), Chan
patent: 4617252 (1986-10-01), Cordes, III et al.
patent: 4935380 (1990-06-01), Okumura
patent: 5194712 (1993-03-01), Jones
patent: 5264076 (1993-11-01), Cuthbert et al.
patent: 5288558 (1994-02-01), Nothe
patent: 5341014 (1994-08-01), Fuju et al.
patent: 5346586 (1994-09-01), Keller
patent: 5428244 (1995-06-01), Segawa et al.
patent: 5539249 (1996-07-01), Roman et al.
IBM Technical Disclosure Bulletin, vol. 22, No. 2, pp. 598-599, Jul. 1979 by Howard.
IBM Technical Disclosure Bulletin, vol. 26, No. 5, pp. 2309-2310, Oct. 1983 by Adler et al.
Yurika Suda et al., "A new anti-reflective layer for deep UV lithography," SPIE vol. 1674 Optical/Laser Microlithography V, 1992, pp. 350-361., Aug. 1992.
Tohru Ogawa et al., "Novel ARC optimization Methodology for KrF excimer laser lithography at low K1 factor," SPIE vol. 1674 Optical/Laser Microlithography V, 1992, pp. 362-375., Aug. 1992.
Tohru Ogawa et al., "Practical resolution enhancement effect by new complete anti-reflective layer in KrF laser lithography," SPIE vol. 1927 Optical/Laser Microlithography VI, 1993, pp. 263-274., Dec. 1993.
Fujii et al., "Dual (n+/p+) Polycide Interconnect Technology using poly-Si/WSi2/poly-Si Structure and Post B+ Implantation," IEDM 1992, pp. 845-848., Dec. 1992.
G. Czech et al., "Reduction of Linewidth Variation for the Gate Conductor Level By lithography Based on a New Antireflective Layer", Microelectronic Engineering, Apr. 21, 1993 No. 1/4, pp. 51-56.
Wolf et al. Silicon Processing, vol. 1, 1986, Lattice Press., pp. 175-182 and 384-386., Dec. 1986.

Affiliated with

Also associated with

Rating

Conductive interconnect structure and method of formation does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Conductive interconnect structure and method of formation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Conductive interconnect structure and method of formation will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2064738