Conductive hard mask to protect patterned features during...

Semiconductor device manufacturing: process – Direct application of electrical current – To alter conductivity of fuse or antifuse element

Reexamination Certificate

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C438S131000, C438S600000, C438S700000

Reexamination Certificate

active

07575984

ABSTRACT:
A method is provided for forming patterned features using a conductive hard mask, where the conductive hard mask protects those features during a subsequent trench etch to form Damascene conductors providing electrical connection to those features from above. The thickness of the hard mask provides a margin to avoid overetch during the trench etch which may be harmful to device performance. The method is advantageously used in formation of a monolithic three dimensional memory array.

REFERENCES:
patent: 5767012 (1998-06-01), Fulford et al.
patent: 6015738 (2000-01-01), Levy et al.
patent: 6043163 (2000-03-01), Tsai et al.
patent: 6326270 (2001-12-01), Lee et al.
patent: 6828229 (2004-12-01), Lee et al.
patent: 6872603 (2005-03-01), Doi
patent: 7037762 (2006-05-01), Joo et al.
patent: 7041595 (2006-05-01), Chopra
patent: 2003/0003647 (2003-01-01), Dennison et al.
patent: 2004/0208039 (2004-10-01), Lowrey et al.
patent: 2005/0121742 (2005-06-01), Petti et al.
patent: 2006/0094154 (2006-05-01), Lung
patent: 1 475 840 (2004-11-01), None
patent: WO 2005/018002 (2005-02-01), None
patent: WO2007-143387 (2007-12-01), None
International Preliminary Report on Patentability of International Application No. PCT/US2007/069450 (SD-MXA-173-PCT) dated Dec. 18, 2008.
International Search Report and Written Opinion of International Application No. PCT/US2007/069450 (SD-MXA-173-PCT) dated Nov. 12, 2007.

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