Conductive hard mask to protect patterned features during...

Details Conductive hard mask to protect patterned features during... Conductive hard mask to protect patterned features during...

2006-05-31

2009-08-18

Vu, Hung (Department: 2811)

Semiconductor device manufacturing: process

Direct application of electrical current

To alter conductivity of fuse or antifuse element

C438S131000, C438S600000, C438S700000

Reexamination Certificate

active

07575984

ABSTRACT:
A method is provided for forming patterned features using a conductive hard mask, where the conductive hard mask protects those features during a subsequent trench etch to form Damascene conductors providing electrical connection to those features from above. The thickness of the hard mask provides a margin to avoid overetch during the trench etch which may be harmful to device performance. The method is advantageously used in formation of a monolithic three dimensional memory array.

REFERENCES:
patent: 5767012 (1998-06-01), Fulford et al.
patent: 6015738 (2000-01-01), Levy et al.
patent: 6043163 (2000-03-01), Tsai et al.
patent: 6326270 (2001-12-01), Lee et al.
patent: 6828229 (2004-12-01), Lee et al.
patent: 6872603 (2005-03-01), Doi
patent: 7037762 (2006-05-01), Joo et al.
patent: 7041595 (2006-05-01), Chopra
patent: 2003/0003647 (2003-01-01), Dennison et al.
patent: 2004/0208039 (2004-10-01), Lowrey et al.
patent: 2005/0121742 (2005-06-01), Petti et al.
patent: 2006/0094154 (2006-05-01), Lung
patent: 1 475 840 (2004-11-01), None
patent: WO 2005/018002 (2005-02-01), None
patent: WO2007-143387 (2007-12-01), None
International Preliminary Report on Patentability of International Application No. PCT/US2007/069450 (SD-MXA-173-PCT) dated Dec. 18, 2008.
International Search Report and Written Opinion of International Application No. PCT/US2007/069450 (SD-MXA-173-PCT) dated Nov. 12, 2007.

Affiliated with

Also associated with

Rating

Conductive hard mask to protect patterned features during... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Conductive hard mask to protect patterned features during..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Conductive hard mask to protect patterned features during... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4104160