Conductive film-attached substrate and method of manufacturing t

Details Conductive film-attached substrate and method of manufacturing t Conductive film-attached substrate and method of manufacturing t

1998-09-25

2000-10-10

Chaudhuri, Olik

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438792, 257 59, H01L 29786

Patent

active

061301191

ABSTRACT:
A method of manufacturing a conductive film-attached substrate wherein a nitride film is formed on an insulating substrate and on at least part of an oxide conductive film formed on the substrate, which is characterized in that after a first silicon nitride film is formed in an atmosphere which is incapable of inducing a reductive effect on the oxide conductive film, a second silicon nitride film is superimposed on the first silicon nitride film under a condition which enables to achieve a faster film-forming rate than that of the first silicon nitride film.

REFERENCES:
patent: 5243202 (1993-09-01), Mori et al.
patent: 5367179 (1994-11-01), Mori et al.
patent: 5663087 (1997-09-01), Yokozawa
patent: 5739877 (1998-04-01), Onisawa et al.

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