Conductive film and low reflection conductive film, and processe

Details Conductive film and low reflection conductive film, and processe Conductive film and low reflection conductive film, and processe

1993-01-22

1994-06-14

Ryan, Patrick J.

Stock material or miscellaneous articles

Composite

Of inorganic material

252519, 428689, 428697, 428699, 428702, 313503, B32B 900

Patent

active

053209133

ABSTRACT:
A conductive film consisting essentially of oxides of Ru and In.

REFERENCES:
patent: 4075449 (1978-02-01), Yagi et al.
patent: 4464647 (1984-08-01), Yokomizo et al.
patent: 5025490 (1991-06-01), Tamura
patent: 5045235 (1991-09-01), Ohara
patent: 5051652 (1991-09-01), Isomura
Patent Abstracts of Japan, vol. 14, No. 133 (E-902), Mar. 13, 1990, JP-A-02 001 104, Jan. 5, 1990.
Patent Abstracts of Japan, vol. 12, No. 201 (M-707), Jun. 10, 1988, JP-A-63 005 990, Jan. 11, 1988.
Hodes et al., "Heterojunction Silicon/Indium Tin Oxide Photoelectrodes," J. Am. Chem. Soc. 1983, 105, 324-330.

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