Conductive exotic-nitride barrier layer for high-dielectric-cons

Details Conductive exotic-nitride barrier layer for high-dielectric-cons Conductive exotic-nitride barrier layer for high-dielectric-cons

1995-06-07

1998-12-22

Niebling, John F.

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438240, 438653, H01L 2912

Patent

active

058518967

ABSTRACT:
A preferred embodiment of this invention comprises an oxidizable layer (e.g. TiN 50), a conductive exotic-nitride barrier layer (e.g. Ti--Al--N 34) overlying the oxidizable layer, an oxygen stable layer (e.g. platinum 36) overlying the exotic-nitride layer, and a high-dielectric-constant material layer (e.g. barium strontium titanate 38) overlying the oxygen stable layer. The exotic-nitride barrier layer substantially inhibits diffusion of oxygen to the oxidizable layer, thus minimizing deleterious oxidation of the oxidizable layer.

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