Conductive container structures having a dielectric cap

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S295000, C257S296000, C257S297000, C257S298000, C257S299000, C257S300000, C257S302000, C257S303000, C257S304000, C257S305000, C257S306000, C257S307000, C257S308000, C257S309000, C257S310000, C438S396000, C438S397000, C438S398000, C438S399000

Reexamination Certificate

active

11458058

ABSTRACT:
Container structures for use in integrated circuits and methods of their manufacture. The container structures have a dielectric cap on the top of a conductive container to reduce the risk of container-to-container shorting by insulating against bridging of conductive debris across the tops of adjacent container structures. The container structures are adapted for use in memory cells and apparatus incorporating such memory cells, as well as other integrated circuits.

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