Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-05-23
2006-05-23
Tran, Mai-Huong (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S734000, C257S773000, C257S774000, C257S368000, C257S369000
Reexamination Certificate
active
07049667
ABSTRACT:
A technique for and structures for camouflaging an integrated circuit structure. The integrated circuit structure is formed by a plurality of layers of material having a controlled outline. A layer of conductive material having a controlled outline is disposed among said plurality of layers to provide artifact edges of the conductive material that resemble one type of transistor (operable vs. non-operable), when in fact another type of transistor was used.
REFERENCES:
patent: 3673471 (1972-06-01), Klein et al.
patent: 3946426 (1976-03-01), Sanders
patent: 4017888 (1977-04-01), Christie et al.
patent: 4139864 (1979-02-01), Schulman
patent: 4164461 (1979-08-01), Schilling
patent: 4196443 (1980-04-01), Dingwall
patent: 4267578 (1981-05-01), Vetter
patent: 4291391 (1981-09-01), Chatterjee et al.
patent: 4295897 (1981-10-01), Tubbs et al.
patent: 4314268 (1982-02-01), Yoshioka et al.
patent: 4317273 (1982-03-01), Guterman et al.
patent: 4322736 (1982-03-01), Sasaki et al.
patent: 4374454 (1983-02-01), Jochems
patent: 4409434 (1983-10-01), Basset et al.
patent: 4435895 (1984-03-01), Parrillo
patent: 4471376 (1984-09-01), Morcom et al.
patent: 4581628 (1986-04-01), Miyauchi et al.
patent: 4583011 (1986-04-01), Pechar
patent: 4603381 (1986-07-01), Guttag et al.
patent: 4623255 (1986-11-01), Suszko
patent: 4727493 (1988-02-01), Taylor, Sr.
patent: 4766516 (1988-08-01), Ozdemir et al.
patent: 4799096 (1989-01-01), Koeppe
patent: 4821085 (1989-04-01), Haken et al.
patent: 4830974 (1989-05-01), Chang et al.
patent: 4939567 (1990-07-01), Kenney
patent: 4962484 (1990-10-01), Takeshima et al.
patent: 4975756 (1990-12-01), Haken et al.
patent: 4998151 (1991-03-01), Korman et al.
patent: 5030796 (1991-07-01), Swanson et al.
patent: 5050123 (1991-09-01), Castro
patent: 5061978 (1991-10-01), Mizutani et al.
patent: 5065208 (1991-11-01), Shah et al.
patent: 5068697 (1991-11-01), Noda et al.
patent: 5070378 (1991-12-01), Yamagata
patent: 5101121 (1992-03-01), Sourgen
patent: 5117276 (1992-05-01), Thomas et al.
patent: 5121089 (1992-06-01), Larson et al.
patent: 5121186 (1992-06-01), Wong et al.
patent: 5132571 (1992-07-01), McCollum et al.
patent: 5138197 (1992-08-01), Kuwana
patent: 5146117 (1992-09-01), Larson
patent: 5168340 (1992-12-01), Nishimura
patent: 5177589 (1993-01-01), Kobayashi et al.
patent: 5202591 (1993-04-01), Walden
patent: 5225699 (1993-07-01), Nakamura
patent: 5227649 (1993-07-01), Chapman
patent: 5231299 (1993-07-01), Ning et al.
patent: 5302539 (1994-04-01), Haken et al.
patent: 5308682 (1994-05-01), Morikawa
patent: 5309015 (1994-05-01), Kuwata et al.
patent: 5317197 (1994-05-01), Roberts
patent: 5336624 (1994-08-01), Walden
patent: 5341013 (1994-08-01), Koyanagi et al.
patent: 5345105 (1994-09-01), Sun et al.
patent: 5354704 (1994-10-01), Yang et al.
patent: 5369299 (1994-11-01), Byrne et al.
patent: 5371390 (1994-12-01), Mohsen
patent: 5376577 (1994-12-01), Roberts et al.
patent: 5384472 (1995-01-01), Yin
patent: 5384475 (1995-01-01), Yahata
patent: 5399441 (1995-03-01), Bearinger et al.
patent: 5404040 (1995-04-01), Hshieh et al.
patent: 5412237 (1995-05-01), Komori et al.
patent: 5441902 (1995-08-01), Hsieh et al.
patent: 5468990 (1995-11-01), Daum
patent: 5475251 (1995-12-01), Kuo et al.
patent: 5506806 (1996-04-01), Fukushima
patent: 5531018 (1996-07-01), Saia et al.
patent: 5539224 (1996-07-01), Ema
patent: 5541614 (1996-07-01), Lam et al.
patent: 5571735 (1996-11-01), Mogami et al.
patent: 5576988 (1996-11-01), Kuo et al.
patent: 5611940 (1997-03-01), Zettler
patent: 5638946 (1997-06-01), Zavracky
patent: 5677557 (1997-10-01), Wuu et al.
patent: 5679595 (1997-10-01), Chen et al.
patent: 5719422 (1998-02-01), Burr et al.
patent: 5719430 (1998-02-01), Goto
patent: 5721150 (1998-02-01), Pasch
patent: 5783375 (1998-07-01), Twist
patent: 5783846 (1998-07-01), Baukus et al.
patent: 5821590 (1998-10-01), Lee et al.
patent: 5834356 (1998-11-01), Bothra et al.
patent: 5838047 (1998-11-01), Yamauchi et al.
patent: 5854510 (1998-12-01), Sur, Jr. et al.
patent: 5866933 (1999-02-01), Baukus et al.
patent: 5880503 (1999-03-01), Matsumoto et al.
patent: 5888887 (1999-03-01), Li et al.
patent: 5920097 (1999-07-01), Horne
patent: 5930663 (1999-07-01), Baukus et al.
patent: 5930667 (1999-07-01), Oda
patent: 5973375 (1999-10-01), Baukus et al.
patent: 5977593 (1999-11-01), Hara
patent: 5998257 (1999-12-01), Lane et al.
patent: 6037627 (2000-03-01), Kitamura et al.
patent: 6046659 (2000-04-01), Loo et al.
patent: 6054659 (2000-04-01), Lee et al.
patent: 6057520 (2000-05-01), Goodwin-Johansson
patent: 6064110 (2000-05-01), Baukus et al.
patent: 6093609 (2000-07-01), Chuang
patent: 6117762 (2000-09-01), Baukus et al.
patent: 6137318 (2000-10-01), Takaaki
patent: 6154388 (2000-11-01), Oh
patent: 6215158 (2001-04-01), Choi
patent: 6294816 (2001-09-01), Baukus et al.
patent: 6326675 (2001-12-01), Scott et al.
patent: 6365453 (2002-04-01), Deboer et al.
patent: 6410413 (2002-06-01), Scott et al.
patent: 6815816 (2004-11-01), Clark et al.
patent: 0 364 769 (1990-04-01), None
patent: 0 463 373 (1992-01-01), None
patent: 0 528 302 (1993-02-01), None
patent: 0 585 601 (1994-03-01), None
patent: 0 764 985 (1997-03-01), None
patent: 0 883 184 (1998-12-01), None
patent: 58-190064 (1983-11-01), None
patent: 63-129647 (1988-06-01), None
patent: 02-046762 (1990-02-01), None
patent: 02-237038 (1990-09-01), None
patent: 98/21734 (1998-05-01), None
patent: 00/44012 (2000-07-01), None
Blythe, et al., “Layout Reconstruction of Complex Silicon Chips,”IEEE Journal of Solid-State Circuits, vol. 28, No. 2, pp. 138-145 (Feb. 1993).
Frederiksen, Thomas M., “Standard Circuits in the New CMOS Era,”Intuitive CMOS Electronics, Revised Edition, pp. 134-146 (Jan. 1989).
Hodges and Jackson,Analysis and Design of Digital Integrated Circuits, 2nd edition, McGraw-Hill, p. 353 (1988).
Larson, L.E., et al., “Microactuators for GaAs-based Microwave Integrated Circuits,”IEEE, pp. 743-746 (1991).
Lee, “Engineering a Device for Electron-Beam Probing,”IEEE Design and Test of Computers, pp. 36-49 (Jun. 1989).
Ng, K.K.,Complete Guide to Semiconductor Devices, McGraw-Hill, Inc., pp. 164-165 (1995).
Sze, S.M.,VLSI Technology, McGraw-Hill, pp. 99, 447, 461-465 (1983).
Sze, S.M., ed., “Silicides for Gates and Interconnections,”VLSI Technology, McGraw-Hill, pp. 372-380 (1983).
U.S. Appl. No. 09/391,258, filed Sep. 7, 1999, Baukus et al.
U.S. Appl. No. 10/637,848, filed Aug. 7, 2003, Chow et al.
Baukus James P.
Chow Lap-Wai
Clark Jr. William M.
Harbison Gavin J.
HRL Laboratories LLC
Ladas & Parry LLP
Raytheon Company
Tran Mai-Huong
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