Conductive adhesive for thinned silicon wafers with through...

Semiconductor device manufacturing: process – With measuring or testing – Electrical characteristic sensed

Reexamination Certificate

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C257SE21521

Reexamination Certificate

active

07541203

ABSTRACT:
The present invention relates to a process for preparing a thinned silicon wafer for electrical testing, the thinned silicon wafer comprising at least one circuit design and at least one through-silicon via or hole; the process comprising temporarily attaching the thinned silicon wafer to a mechanical handler by means of an electrically conductive polymeric adhesive material.

REFERENCES:
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patent: 6288559 (2001-09-01), Bernier et al.
patent: 6559666 (2003-05-01), Bernier et al.
patent: 7129567 (2006-10-01), Kirby et al.
patent: 7135345 (2006-11-01), Hamren et al.
patent: 7341881 (2008-03-01), Watkins et al.
patent: 2001/0024127 (2001-09-01), Bernier et al.
patent: 2005/0014301 (2005-01-01), Hamren et al.
patent: 2005/0042782 (2005-02-01), Hamren et al.
patent: 2005/0070072 (2005-03-01), Priewasser
patent: 2007/0155029 (2007-07-01), Hamren et al.
patent: WO 00/31784 (2000-06-01), None

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