Conduction control device

Static information storage and retrieval – Systems using particular element – Magnetoresistive

Reexamination Certificate

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C365S171000, C365S173000

Reexamination Certificate

active

07554834

ABSTRACT:
A conduction control device comprises a first ferromagnetic region having relatively high coercivity, a second ferromagnetic region having relatively low coercivity and a junction region disposed between the first and second ferromagnetic regions. The device also comprises a gate for applying a field to the junction region so as to control charge carrier density within the junction region.

REFERENCES:
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patent: 7245523 (2007-07-01), Ho et al.
patent: 2003/0128580 (2003-07-01), Park et al.
“Spintronics: A Spin-based Electronics Vision for the Future” by S.A. Wolf, et al., Science, vol. 294, pp. 1488-1495, 2001.
“Making Nonmagmetic Semiconductors Ferromagnetic” by H. Ohno., Science vol. 281., Aug. 1998. pp. 951-956.
Very Large Magnetoresistance in Lateral Ferromagnetic (Ga,Mn)As Wires with Nanoconstrictions, by C. Rüster, et al. pp. 216602-1-216602-4., The American Physical Society 2003., vol. 91, No. 21.
“Tunneling Anisotropic Magnetoresistance: A Spin-Valve-Like Tunnel Magnetoresistance Using a Single Magnetic Layer” by C. Gould, et al., vol. 93, No. 11, 2004, pp. 117203-1-117203-4.
Lepadatu et al., “Direct Observation of Domain Wall Scattering in Patterned Ni80Fe20 and Ni Nanowires by Current-Voltage Measurements”, Physical Review Letters, New York, NY, US, vol. 92, No. 12, Mar. 26, 2004, pp. 127201-1, XP002365712.
Giddings et al., “Large Tunneling Anisotropic Magnetoresistance in (Ga, Mn) As Nanoconstrictions”, Physical Review Letters, New York, NY, US, Apr. 1, 2005, pp. 127202-1, XP002365713.

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