Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-12-27
2005-12-27
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S637000, C438S672000
Reexamination Certificate
active
06979638
ABSTRACT:
Disclosed is a method for forming conducting wire and contact opening in a semiconductor device. The method of the present invention utilizes the formation of metal regions as a mask for etching a conductive layer of the semiconductor device to remove unnecessary portions so as to form conducting wires. The method of the present invention can reduce the necessary thickness of photoresist and well control the via resistance.
REFERENCES:
patent: 5529955 (1996-06-01), Hibino et al.
patent: 5756395 (1998-05-01), Rostoker et al.
patent: 6124194 (2000-09-01), Shao et al.
patent: 6140225 (2000-10-01), Usami et al.
patent: 6225217 (2001-05-01), Usami et al.
patent: 6368951 (2002-04-01), Higashi et al.
Chen Yi-Nan
Huang Tse-Yao
Shih Chiang-Lin
Bacon & Thomas
Estrada Michelle
Fourson George
Nanya Technology Corporation
LandOfFree
Conducting wire and contact opening forming method for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Conducting wire and contact opening forming method for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Conducting wire and contact opening forming method for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3512779