Conducting metal oxide with additive as p-MOS device electrode

Details Conducting metal oxide with additive as p-MOS device electrode Conducting metal oxide with additive as p-MOS device electrode

2007-07-10

2007-07-10

Baumeister, William B. (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S678000, C438S689000, C257SE21273, C257SE21009

Reexamination Certificate

active

11092469

ABSTRACT:
Methods for fabricating high work function p-MOS device metal electrodes are provided. In one embodiment, a method is provided for producing a metal electrode including the steps of: providing a high k dielectric stack with an exposed surface; contacting the exposed surface of the high k dielectric stack with a vapor of a metal oxide wherein the metal oxide is selected from the group consisting of RuOx, IrOx, ReOx, MoOx, WOx, VOx, and PdOx; and contacting the exposed surface of the dielectric stack with a vapor of an additive selected from the group consisting of SiO2, Al2O3, HfO2, ZrO2, MgO, SrO, BaO, Y2O3, La2O3, and TiO2, whereby contacting the exposed surface of the dielectric stack with the vapor of the metal oxide and the vapor of the additive forms an electrode and wherein the additive is present at an amount between about 1% to about 50% by atomic weight percent in the electrode.

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