Conditioning of dielectric materials

Details Conditioning of dielectric materials Conditioning of dielectric materials

1997-02-10

2000-07-18

Nelms, David

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438784, H01L 2131

Patent

active

060907231

ABSTRACT:
A method for conditioning a dielectric material on a semiconductor substrate structure during a semiconductor fabrication process, comprising the steps of: irradiating the dielectric material using ultraviolet light irradiation while in a ambient exhibiting the properties of self-limiting oxidation, during a first annealing period; following the first annealing period by exposing the dielectric material to an oxygen ambient during a second annealing period. This method may be applied to the conditioning of a capacitor dielectric on a capacitor structure, or to the conditioning of a field effect transistor gate dielectric on a field effect transistor gate structure or to the conditioning of insulative spacers about the sidewalls of a field effect transistor gate structure.

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patent: 5759262 (1998-06-01), Weimer et al.
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"Metalorganic Chemical Apor Deposition (MOCVD) of Oxides for Electronic and Photonic Applications"--The Minerals, Metals & Materials Society, 1995, pp. 211-220.
"UV-O.sub.3 and Dry-O.sub.2 : Two-Step Annealed Chemical Vapor-Deposited Ta.sub.2 O.sub.5 Films for Storage Dielectrics of 64-Mb DRAM's"--IEEE Transactions on Electron Devices, vol. 38, No. 3, Mar. 1991, pp. 455-462.

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