Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-01-16
2007-01-16
Owens, Douglas W. (Department: 2811)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S283000
Reexamination Certificate
active
10227995
ABSTRACT:
The present invention provides methods for fabrication of fin-type field effect transistors (FinFETs) and thick-body devices on the same chip using common masks and steps to achieve greater efficiency than prior methods. The reduction in the number of masks and steps is achieved by using common masks and steps with several scaling strategies. In one embodiment, the structure normally associated with a FinFET is created on the side of a thick silicon mesa, the bulk of which is doped to connect with a body contact on the opposite side of the mesa. The invention also includes FinFETs, thick-body devices, and chips fabricated by the methods.
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Abadeer Wagdi W.
Brown Jeffrey S.
Fried David M.
Gauthier Jr. Robert J.
Nowak Edward J.
Kotulak Richard M.
Owens Douglas W.
Schmeiser Olsen & Watts
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