Concave pattern formation method and method for forming...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C257SE21585, C257SE21548

Reexamination Certificate

active

11098371

ABSTRACT:
A pattern formation method includes the steps of forming a flowable film made of a material with flowability; forming at least one of a concave portion and a convex portion provided on a pressing face of a pressing member onto the flowable film by pressing the pressing member against the flowable film; forming a solidified film by solidifying the flowable film, onto which the at least one of a concave portion and a convex portion has been transferred, through annealing at a first temperature with the pressing member pressed against the flowable film; and forming a pattern made of the solidified film burnt by annealing at a second temperature higher than the first temperature.

REFERENCES:
patent: 5772905 (1998-06-01), Chou
patent: 2005/0164494 (2005-07-01), Nakagawa et al.
patent: 2005/0170269 (2005-08-01), Nakagawa et al.
patent: 06-267943 (1994-09-01), None
patent: 07-121914 (1995-05-01), None
patent: 2000-194142 (2000-07-01), None
patent: 2001-252927 (2001-09-01), None
patent: 2002-158221 (2002-05-01), None
patent: 2003-077807 (2003-03-01), None
Chou, Stephen Y., et al. “Imprint of sub-25 nm vias and trenches in polymers.” Appl. Phys. Lett. 67 (21), Nov. 20, 1995, pp. 3114-3115.

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