Computer controlled system for processing semiconductor wafers

Details Computer controlled system for processing semiconductor wafers Computer controlled system for processing semiconductor wafers

1980-05-19

1982-02-02

Massie, Jerome W.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

118731, 156345, 156646, 198776, 204192E, 204298, C23C 1500, H01L 21306

Patent

active

043137830

ABSTRACT:
Automated reactor system and process for etching or otherwise processing semiconductor wafers in a plasma environment. The wafers are carried into and out of a reaction chamber by a conveyor and processed on an individual basis. Within the chamber, an electrode mounted on a swinging arm carries each wafer from the conveyor to a processing position adjacent to a stationary electrode. Gas is admitted to the chamber, and the electrodes are energized to ionize the gas and form a plasma for processing the wafer between the electrodes.

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patent: 3756939 (1973-09-01), Hurwitt
patent: 3838031 (1974-09-01), Snaper
patent: 3857479 (1974-12-01), Brems
patent: 4131267 (1978-12-01), Ono et al.
patent: 4149923 (1979-04-01), Uehara et al.
patent: 4151034 (1979-04-01), Yamamoto et al.
patent: 4192706 (1980-03-01), Horiike
patent: 4209357 (1980-06-01), Gorin et al.
patent: 4252595 (1981-02-01), Yamamoto et al.
Hutt, "Microprocessor . . . Sputtering", Solid State Technology (12/76), pp. 74-76.

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