Comprising agglomerates of one or more noble metals

Details Comprising agglomerates of one or more noble metals Comprising agglomerates of one or more noble metals

2005-02-22

2005-02-22

Smith, Matthew (Department: 2825)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S255000, C438S398000, C438S665000

Reexamination Certificate

active

06858894

ABSTRACT:
The invention includes a method of depositing a noble metal. A substrate is provided. The substrate has a first region and a second region. The first and second regions are exposed to a mixture comprising a precursor of a noble metal and an oxidant. During the exposure, a layer containing the noble metal is selectively deposited onto the first region relative to the second region. In particular applications, the first region can comprise borophosphosilicate glass, and the second region can comprise either aluminum oxide or doped non-oxidized silicon. The invention also includes capacitor constructions and methods of forming capacitor constructions.

REFERENCES:
patent: 3653947 (1972-04-01), Kandler et al.
patent: 6022775 (2000-02-01), Tsai et al.
patent: 6518198 (2003-02-01), Klein
patent: 20030203508 (2003-10-01), Yates et al.

Affiliated with

Also associated with

Rating

Comprising agglomerates of one or more noble metals does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Comprising agglomerates of one or more noble metals, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Comprising agglomerates of one or more noble metals will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3484361