Compressive nitride film and method of manufacturing thereof

Details Compressive nitride film and method of manufacturing thereof Compressive nitride film and method of manufacturing thereof

2009-02-02

2010-12-14

Dang, Phuc T (Department: 2892)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

C438S197000, C438S202000

Reexamination Certificate

active

07851376

ABSTRACT:
Embodiments of the invention provide a method of forming a compressive stress nitride film overlying a plurality of p-type field effect transistor gate structures produced on a substrate through a high-density plasma deposition process. Embodiments include generating an environment filled with high-density plasma using source gases of at least silane, argon and nitrogen; biasing the substrate to a high frequency power of varying density, in a range between 0.8 W/cm2and 5.0 W/cm2; and depositing the high-density plasma to the plurality of gate structures to form the compressive stress nitride film.

REFERENCES:
patent: 6217721 (2001-04-01), Xu et al.
patent: 6426272 (2002-07-01), Fu et al.
patent: 6472307 (2002-10-01), Dennis et al.
patent: 6521518 (2003-02-01), Chiu et al.
patent: 6670717 (2003-12-01), Kane et al.
patent: 6806165 (2004-10-01), Hopper et al.
patent: 6858530 (2005-02-01), Kane et al.
patent: 7205240 (2007-04-01), Karim et al.
patent: 7247582 (2007-07-01), Stern et al.
patent: 7381451 (2008-06-01), Lang et al.
patent: 7462527 (2008-12-01), Conti et al.
patent: 7514370 (2009-04-01), Yang et al.
patent: 2003/0071361 (2003-04-01), Kane et al.
patent: 2004/0089952 (2004-05-01), Kane et al.
patent: 2004/0113217 (2004-06-01), Chidambarrao et al.
patent: 2004/0152251 (2004-08-01), Shin
patent: 2005/0040460 (2005-02-01), Chidambarrao et al.
patent: 2005/0158955 (2005-07-01), Yang et al.
patent: 2005/0189589 (2005-09-01), Zhu et al.
patent: 2005/0287747 (2005-12-01), Chakravarti et al.
patent: 2006/0270245 (2006-11-01), Conti et al.
patent: 2007/0007548 (2007-01-01), Conti et al.
patent: 0799903 (1997-10-01), None
“Method of Forming Nitride Films With High Compressive Stress for Improved PFET Device Performance” (U.S. Appl. No. 11/160,705), filed Jul. 6, 2005.
“HDP/PECVD Methods of Fabricating Stress Nitride Structures For Field Effect Transistors, and Field Effect Transistors So Fabricated” ( U.S. Appl. No. 11/264,865), filed Nov. 2, 2005.
“HDP/PECVD Methods of Fabricating Stress Nitride Structures for Field Effect Transistors So Fabricated” (U.S. Appl. No. 11/264,865, filed Nov. 2, 2005).

Affiliated with

Also associated with

Rating

Compressive nitride film and method of manufacturing thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Compressive nitride film and method of manufacturing thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Compressive nitride film and method of manufacturing thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4210049