Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-12-13
1997-05-13
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257342, 257546, 257146, H01L 2702
Patent
active
056295421
ABSTRACT:
Provided is a compounded power MOSFET which has a high positive and negative withstand voltages for the drain terminal relative to the source terminal, and can be formed on a single chip based on the conventional fabrication process of power MOSFETs. Power MOSFETs 10 and 11 have their drains connected together, the MOSFET 10 has its source and gate used for the source terminal 0 and gate terminal 1, respectively, of the compounded power MOSFET 60, and the MOSFET 11 has its source used for the drain terminal 2. The compounded power MOSFET includes a voltage comparator 50 which drives the MOSFET 11 to turn off when the terminal 2 has a negative voltage, and a voltage transmitter 51 which is connected between the terminal 1 and the gate of the MOSFET 11 to block a current flowing from the terminal 2 to the terminal 1 by way of the circuit 50 and transfer the voltage of the terminal 1 to the gate of the MOSFET 11. The positive withstand voltage is provided by the MOSFET 10, and the negative withstand voltage is provided by the MOSFET 11.
REFERENCES:
patent: 5144518 (1992-09-01), Miyazaki
patent: 5432371 (1995-07-01), Denner et al.
patent: 5477077 (1995-12-01), Kumagai et al.
W. Chavez et al., "Revers Battery Protection: A New Niche for Power Bipolar Transistors", PCIM, Oct. 1993, pp. 9-17.
Otaka Shigeo
Sakamoto Kozo
Takagawa Kyouichi
Hitachi , Ltd.
Monin, Jr. Donald L.
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