Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-11-20
2007-11-20
Fourson, George R. (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S040000, C257SE51007, C257SE29291, C257SE29294, C257SE21299, C257SE21440, C438S099000, C438S158000, C977S936000
Reexamination Certificate
active
11313250
ABSTRACT:
Embodiments of the invention provide a semiconductor component and a method of manufacture thereof. A semiconductor component comprises: a gate electrode layer adjacent a substrate, and a gate dielectric layer adjacent the gate electrode layer. The gate dielectric layer comprises a monolayer of at least one compound, wherein the compound has an aromatic or a condensed aromatic molecular group. The molecular group is capable of π-π interactions, which stabilize the monolayer. In an embodiment, the semiconductor component is an organic field effect transistor (OFET). In an embodiment of the invention, a method includes forming the monolayer using a liquid phase immersion process.
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Buckel Frank
Effenberger Franz
Halik Marcus
Klauk Hagen
Maisch Steffen
Fourson George R.
Infineon - Technologies AG
Maldonado Julio J.
Slater & Matsil L.L.P.
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