Compound semiconductors and a method for thin film growth

Coating apparatus – Control means responsive to a randomly occurring sensed... – Condition of coated material

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118690, 118708, 118712, 118715, 118726, C23C 1400

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054908809

ABSTRACT:
A molecular beam epitaxy (MBE) system (10) is provided to grow thin film, epitaxy layers (44, 46, 48, 50) on compound semiconductor substrates (40). A mass spectrometer detector (95) is used to monitor and control the flux from selected sources (21, 23, 25, 27) within the MBE system (10). A uniform layer of indium gallium arsenide (46, 50) may be grown on a semiconductor substrate (40) by controlling the indium flux with respect to substrate (40) temperature and time. An epitaxy layer (46) of indium gallium arsenide with uniform mole fraction concentration and reduced lattice strain is produced.

REFERENCES:
patent: 4639377 (1987-01-01), Yamamoto
patent: 5171399 (1992-12-01), Brennan et al.
G. J. Davies & David Williams, "III-V MBE Growth Systems", The Technology & Physics of Molecular Beam Epitaxy, Plenum Press, pp. 15-18 & p. 22.
Yasuhiro Shiraki, "Silicon Molecular Beam Deposition", The Technology and Physics of Molecular Beam Epitaxy, Plenum Press, pp. 345-348 & p. 398.
R. S. Smith, et al "An electrical and photoluminescence study of pseudomorphic GaAs/In..sub.11 Ga.sub.89 As/A1..sub.23 Ga..sub.77 AS HEMT structures" IEE Colloquium on Helterojunction and Quantym Well Devices: Physics, Engineering & Applications IEE, 90 pp (1988) pp. 13/1-13/4. (Abstract only).
T. M. Brennan, et al "Application of reflection mass spectrometry to Molecular-beam epitaxial growth of InAIAs and InGaAs" J. Vac. Sci. Technology B7 (2), Mar./Apr. 1989 pp. 277-282.
W. M. Lau, et al "Capping and Decapping of InP and InGaAs Surfaces" J. Appl. Phys. 67 (2), 15 Jan. 1990, pp. 768-773.

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